Invited Speakers
This page will be continuously updated as soon as new invitees are confirmed
This page will be continuously updated as soon as new invitees are confirmed
Name | Affiliation | Title |
Esther Alarcon Llado | AMOLF, Netherlands | Electrochemical methods for functional nanostructure growth |
Martin Albrecht | Leibniz Insitute für Kristallzüchtung, Germany | The Impact of Order and Disorder in the Phase Formation of (In,Ga)2O3 |
Colombo Bolognesi | ETH | THz InP/GaAsSb DHBTs |
Emmanouil Dimakis | Helmholtz-Zentrum Dresden-Rossendorf | Bandgap tuning and electron mobility enhancement in strained III-V nanowires |
Johan Ekman | KISAB, Sweden | 4H-SiC Substrate Manufacturing Using the Fast Sublimation Growth Process |
Jérôme Faist | ETH Zürich, Switzerland | Integrated Quantum cascade laser combs for spectroscopy |
Roberto Fornari | University of Parma, Italy | Crystallographic phase of Ga2O3 epilayers as a function of growth method and parameters |
Jung Han | Yale University, US | Porous GaN and its applications |
Martin Kuball | University of Bristol, UK | Thermal Management of Electronics-GaN and Gallium Oxide |
Christian Kuhn | Technische Universität Berlin (TU Berlin), Germany | MOVPE growth of AlGaN-based deep UV LEDs with tunnel heterojunctions |
Bernardette Kunert | imec, Belgium | III/V Nano-Ridge Engineering for Device Integration on 300 mm Silicon |
Maki Kushimoto | Nagoya University, Japan | Development of polarization doped UVC LDs on AlN substrates |
Yoan Léger | Univ Rennes, INSA de Rennes, France | High quality-factor Zinc-Blende III-V microdisks on Silicon for nonlinear photonics |
David C. Look | Wright State University, Dayton, Ohio, USA | Quantum-based magnetoconductivity in degenerate thin films: application to Si-doped b-Ga2O3 |
Shinji Matsuo | NTT Device Technology Labs, Japan | Directly modulated membrane lasers and photonic crystal lasers on Si |
Hideaki Matsuzaki | NTT | Scaling-down and integration technologies of InP-based transistors and their THz-band applications |
Hideto Miyake | Mie University, Japan | MOVPE Growth of Al(Ga)N on Face-to-Face Annealed Sputtered AlN with Low Threading Dislocation Density |
Stefan Mönch | Fraunhofer Institute for Applied Solid State Physics IAF | Integration of GaN-on-Si Power Converter Topologies, Circuits, and Sensors |
Kouji Nakahara | Lumentum, Japan | High-speed directly modulated AlGaInAs/InP MQW lasers |
Muhammad Nawaz | Hitachi ABB Power Grids Research, Västerås, Sweden | On the ultra-fast switching and reliability aspects of wide bandgap devices and their impact on power applications |
Daniel Neumaier | Fraunhofer Institute for Applied Solid State Physics IAF, Germany | Graphene based Electronic Devices and Integrated Circuits-Applications and Manufacturing |
Oldenbeuving, R.M. | LioniX International, Netherlands | Sub kHz linewidth tunable lasers by hybrid integration of InP gain chips with SiN-PICs |
Tomas Palacios | MIT | Vertical Power Devices… Where is the Limit? |
Patrick Parkinson | University of Manchester, UK |
A needle in a needlestack – exploiting functional inhomogeneity as a tool for optimized nanooptoelectronics |
Juris Purans | ISSP, Riga, Latvia | Iridium Doped p-type Zinc Oxide Thin Films |
K. Radhakrishnan | Nanyang Technological University | Unintentional or modulation doping‒what is the choice for AlGaN/GaN based multichannel high-electron-mobility transistor heterostructures? |
Siddharth Rajan | Ohio State Unviersity, USA | High-Performance Gallium Oxide Lateral Field Effect Transistors |
Patrick Runge | HHI, Germany | High-Speed InP-based photodetectors |
Lars Samuelson | Lund University | Relaxed and dislocation-free InGaN platelets as ideal templates for red-emitting LEDs for the realization of all-nitride microLED displays |
Benedikt Schwarz | TU Vienna, Austria | Frequency combs in QCLs and ICLs |
Bei Shi | University of California, Santa Barbara (UCSB), US | 1550 nm lasers epitaxially grown on silicon |
James Speck | UCSB | Materials progress for the development of β-Ga2O3 for power electronics |
Hoe Tan | Australian NationalUnviersity, Camberra | Selective area growth of InP micro-ring lasers |
Vladimir Tassev | Air Force Research Lab, USA | New Prospects in Development of Laser Sources for the MLWIR Region: Heteroepitaxy of GaAsP on GaAs and Si |
Florin Udrea | Univ. of Cambridge | Emerging superjunction wide bandgap power devices |
Jawad ul Hassan | Linköping University, Sweden | CVD Growth and Properties of b-Ga2O3 Epitaxial Layers |
Jos van der Tol | TU Eindhoven, Netherlands | IMOS: A maturing platform for photonic integration on an indium phosphide membrane |
Zhenxing Wang | AMO GmbH, Aachen, Germany | Metal-Insulator-Graphene RF Diodes: From Device to Integrated Circuits |
Lars-Erik Wernersson | Lund University | III-V Nanowire MOSFETs on Si Substrates |
Lasse Vines | Oslo University, Norway | Electrically active defects in b-Ga2O3 |
Kritijonas Vizbaras | Brolis Semiconductors | Paving the Way Towards Optical Sensing Revolution: Integrated Hybrid GaSb/SOI Ultra-Widely Swept Laser-based Sensors for Health and Wellness Applications |
Grace Xing | Cornell | How to achieve 1 GW/cm2 Ga2O3 transistors? |
Amnon Yarif | Caltech, USA | Linewidth of semiconductor lasers |
Weidong Zhou | University of Texas at Arlington | Scaling of Photonic Crystal Lasers for Energy Efficient 3D Integrated Photonics on Silicon |
Val Zwiller | KTH | Quantum hardware for quantum communication |